Monolithic 3D-ICs with single grain Si thin film transistors

Author

Ishihara, Ryoichi ; Mofrad, M.R.T. ; Derakhshandeh, J. ; Golshani, Negin ; Beenakker, C.I.M.

Author_Institution

Fac. of Electr. Eng., Math. & Comput. Sci., Delft Univ. of Technol., Delft, Netherlands

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

4

Abstract

We review our achievement in monolithic 3D-ICs based on single-grain Si TFTs that are fabricated inside a single-grain with a low-temperature process. With pulsed-laser crystallization, Si grains with a diameter of 6 μm are successfully formed on predetermined positions. Single-grain (SG) Si TFTs are fabricated inside the single-grain with mobility for electron and holes of 600 cm²/Vs and 200 cm²/Vs, respectively. Using two layers of the SG Si TFT layers, CMOS inverter, 6T-SRAM and image sensor array with in-pixel amplifier have been fabricated.

Keywords

crystallisation; low-temperature techniques; silicon; thin film transistors; three-dimensional integrated circuits; image sensor array; low-temperature process; monolithic 3D-IC; pulsed-laser crystallization; single grain Si thin film transistors; CMOS integrated circuits; Inverters; MOS devices; PIN photodiodes; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467714

Filename

6467714