Radiation detector readout circuit with two-stage charge sensitive amplifier

Author

Ya-Cong Zhang ; Xiao-Lu Chen ; Wen-Gao Lu ; Zhong-Jian Chen

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

A two-stage charge sensitive amplifier structure suitable for silicon radiation detector with large capacitance is proposed. It has the advantage that the integration capacitor can be large to reduce the gain sensibility to detector capacitance variation without any stability problem. The feasibility of the proposed circuit is verified by comparing the simulation results with the conventional one-stage charge sensitive amplifier. A prototype of 16-channel readout circuit for electron collection has been taped out in a 0.35μm CMOS technology with a power supply of 5V. The area is 2.5×1.54mm² with 42 pads and the power dissipation is 60mW.

Keywords

CMOS analogue integrated circuits; amplifiers; particle detectors; readout electronics; silicon; 16-channel readout circuit; CMOS technology; Si; detector capacitance variation; integration capacitor; one-stage charge sensitive amplifier; power 60 mW; power dissipation; radiation detector readout circuit; size 0.35 mum; two-stage charge sensitive amplifier structure; voltage 5 V; CMOS integrated circuits; Capacitance; Capacitors; Circuit stability; Detectors; Radiation detectors; Stability analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467724

Filename

6467724