Model design of non-volatile SRAM based on Magnetic Tunnel Junction

Author

Kirubaraj, A. Alfred ; Emmanuel, A. Affum

Author_Institution

Sch. of Electr. Sci., SRM Univ., Chennai, India

fYear

2009

fDate

14-16 Jan. 2009

Firstpage

68

Lastpage

72

Abstract

Recently there has been considerable interest in MTJ based MRAM because of its promising characteristics exhibiting high non-volatility combined with high density and radiation hardness as well as nondestructive readout (NDRO), very high radiation tolerance higher write/erase endurance compared to the FRAMs, and virtually unlimited power-off storage capability. This paper presents the design of static random access memory (SRAM) cell followed by MTJ that makes SRAM cell non-volatile, in which the output of SRAM cell having logic state 0 and 1 changes the direction of the moment of the free magnetic layer which is used for the information storage in MTJ device.

Keywords

MRAM devices; SRAM chips; magnetic tunnelling; free magnetic layer; information storage; logic state; magnetic tunnel junction; nondestructive readout; nonvolatile SRAM; radiation hardness; radiation tolerance; write-erase endurance; CMOS logic circuits; CMOS technology; Flip-flops; Logic design; Magnetic devices; Magnetic separation; Magnetic tunneling; Nonvolatile memory; Random access memory; Voltage; MRAM; MTJ; SOC; SRAM; TMR;

fLanguage

English

Publisher

ieee

Conference_Titel

Adaptive Science & Technology, 2009. ICAST 2009. 2nd International Conference on

Conference_Location

Accra

ISSN

0855-8906

Print_ISBN

978-1-4244-3522-7

Electronic_ISBN

0855-8906

Type

conf

DOI

10.1109/ICASTECH.2009.5409743

Filename

5409743