DocumentCode
3419104
Title
RF-Schottky diodes with Ni silicide for mixer applications
Author
Morschbach, M. ; Schollhorn, C. ; Oehme, M. ; Kasper, E.
Author_Institution
Inst. fur Halbleitertechnik, Stuttgart Univ., Germany
fYear
2003
fDate
11-11 April 2003
Firstpage
122
Lastpage
125
Abstract
In this paper n- and p-doped Schottky diode with NiSi (nickel silicide) as contact material will be compared with Schottky diodes with Al (aluminum) contact. It is shown that a useable p-doped Schottky diode with high cut-off frequency could be achieved if nickel silicide is used as contact material. Also is proved that nickel silicide, if used as contact material, decreases the series resistance in cause of a reduced contact resistance.
Keywords
Schottky diodes; contact resistance; electrical contacts; elemental semiconductors; millimetre wave diodes; millimetre wave mixers; nickel compounds; semiconductor device metallisation; semiconductor-metal boundaries; silicon; NiSi contact material; RF Schottky diode; contact resistance; high cut-off frequency; mixer applications; n-doped Schottky diode; p-doped Schottky diode; series resistance; Aluminum; Circuits; Contact resistance; Cutoff frequency; Mixers; Nickel; Radio frequency; Schottky diodes; Silicides; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location
Grainau, Germany
Print_ISBN
0-7803-7787-7
Type
conf
DOI
10.1109/SMIC.2003.1196685
Filename
1196685
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