Consistent simulation of bandgap narrowing in SiGe HBTs

Author

Yun Shi ; Guofu Niu ; Cressler, J.D.

Author_Institution

Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA

fYear

2003

fDate

11-11 April 2003

Firstpage

174

Lastpage

177

Abstract

This work investigates the modeling of heavy doping induced bandgap narrowing (BGN) in highly scaled SiGe HBTs. An inconsistency between simulated results obtained using either Boltzmann or Fermi-Dirac statistics is identified for two widely used commercial device simulators: MEDICI and DESSIS. A new approach to BGN modeling is introduced to correct the problem. The impact of the distribution of BGN between the conduction band and the valence band on the simulated cut-off frequency in SiGe HBTs is also addressed.

Keywords

Ge-Si alloys; conduction bands; digital simulation; electronic engineering computing; energy gap; heavily doped semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; statistics; valence bands; Boltzmann statistics; DESSIS; Fermi-Dirac statistics; MEDICI; SiGe; commercial device simulators; conduction band; heavy doping induced bandgap narrowing; highly scaled SiGe HBTs; modeling; simulated cut-off frequency; valence band; Doping; Error analysis; Germanium silicon alloys; Heterojunction bipolar transistors; Medical simulation; Photonic band gap; Semiconductor process modeling; Silicon germanium; Statistical distributions; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on

Conference_Location

Grainau, Germany

Print_ISBN

0-7803-7787-7

Type

conf

DOI

10.1109/SMIC.2003.1196698

Filename

1196698