DocumentCode
3419441
Title
Scaleable non linear low frequency noise model of SiGe HBT
Author
Rennane, A. ; Bary, L. ; Niu, G. ; Cressler, J.D. ; Joseph, J. ; Graffeuil, J. ; Plana, R.
Author_Institution
LAAS, Univ. Paul Sabatier, Toulouse, France
fYear
2003
fDate
11-11 April 2003
Firstpage
189
Lastpage
191
Abstract
This paper presents the low frequency noise behavior of advanced SiGe HBT´s. It is investigated the influence of the Ge rate on the low frequency noise properties. We propose a scaleable non linear model that is compatible with commercial CAD platform.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; SiGe; SiGe HBT; low-frequency noise; scaleable nonlinear model; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Microelectronics; Noise figure; Noise generators; Noise measurement; Radio frequency; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers. 2003 Topical Meeting on
Conference_Location
Grainau, Germany
Print_ISBN
0-7803-7787-7
Type
conf
DOI
10.1109/SMIC.2003.1196702
Filename
1196702
Link To Document