Reactive ion etching of Germanium using SF6/CHF3/He gas mixture

Author

Min Li ; Meng Lin ; Quanxin Yun ; Zhiqiang Li ; Xia An ; Ming Li ; Xing Zhang ; Ru Huang

Author_Institution

Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

The effect of CHF₃ gas flow rate on the trench shape and etch rate was studied for germanium-based device fabrication. In this study, a sidewall tilt angle larger than 80° with the trench depth of 300nm was achieved by optimizing the flow rate ratio of SF₆/CHF₃/He gas mixture. Then, based on the experimental results, a Linear Reactive Ion Etching (RIE) Model was proposed to predict the optimized composition of the SF₆/CHF₃/He gas mixture to obtain steep trenches with low etch rate, which may provide the guideline for the germanium etching process design.

Keywords

elemental semiconductors; gas mixtures; germanium; isolation technology; semiconductor device models; sputter etching; Ge; RIE model; depth 300 nm; device fabrication; etch rate; etching process design; flow rate ratio; gas flow rate; gas mixture; linear reactive ion etching; sidewall tilt angle; steep trench; trench shape; Chemicals; Etching; Germanium; Passivation; Polymers; Sulfur hexafluoride;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467812

Filename

6467812