F — Band injection locked tripler based on Colpitts oscillator

Author

Vishnipolsky, Amit ; Socher, Eran

Author_Institution

Sch. of Electr. Eng., Tel-Aviv Univ., Tel Aviv, Israel

fYear

2012

fDate

16-18 Jan. 2012

Firstpage

13

Lastpage

16

Abstract

This paper presents an F band injection locked frequency tripler (ILFT). The ILFT is based on transformer coupling into the resonator of differential Colpitts oscillator. The locking range of the Tripler is between 90 to 115 GHz thus achieving 24.5% locking range. Transformers are used to couple the signals in and out of the ILFT, without additional power consuming buffers. The ILFT was implemented in 90 nm CMOS process, with a maximum power consumption of the circuit is 17 mW and area of 0.284 mm² including bond pads.

Keywords

CMOS integrated circuits; field effect MIMIC; frequency multipliers; injection locked oscillators; low-power electronics; millimetre wave oscillators; transformers; CMOS process; F-band injection locked frequency tripler; ILFT; differential Colpitts oscillator; frequency 90 GHz to 115 GHz; power 17 mW; power consumption; size 90 nm; transformer coupling; CMOS integrated circuits; Phase noise; Radiofrequency integrated circuits; Transistors; Tuning; Voltage-controlled oscillators; CMOS; F-band; ILFT; Injection lock; Tripler; W-band; mm-Wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012 IEEE 12th Topical Meeting on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4577-1317-0

Type

conf

DOI

10.1109/SiRF.2012.6160143

Filename

6160143