PZT thin film actuator/sensor for atomic force microscope

Author

Watanabe, Shunji ; Fujiu, Takamitsu ; Fujii, Toru

Author_Institution

Opto-Electron. Mater. Lab., Nikon Corp., Tokyo, Japan

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

199

Abstract

A high quality lead zirconate titanate thin film was formed on a silicon cantilever at 400°C by rf magnetron sputtering and subsequent annealing at 650°C. Poling at 9 kV/mm at room temperature increased piezoelectric properties. The transverse piezoelectric constant of the PZT film was estimated to be -130 pC/N, which was as high as that of bulk ceramic PZT. We have demonstrated the capability of atomic force microscopy equipped with cantilevers having the PZT thin film deformation sensor/actuator (PZT-AFM lever). Aggregated grains of an evaporated gold film were observed clearly by a PZT-AFM lever used as an displacement sensor. A PZT-AFM lever was also used as an actuator for high speed feedback motion for AFM imaging

Keywords

atomic force microscopy; displacement measurement; lead compounds; piezoceramics; piezoelectric actuators; piezoelectric thin films; piezoelectric transducers; position control; sputter deposition; 400 C; 650 C; AFM imaging; Au-PZT-Si; Au-PbZrO3TiO3-Si; PZT thin film actuator; PZT thin film sensor; PZT-AFM lever; Si; Si cantilever; aggregated grains; annealing; atomic force microscope; deformation sensor; evaporated Au film; high speed feedback motion; rf magnetron sputtering; room temperature poling; transverse piezoelectric constant; Actuators; Atomic force microscopy; Force sensors; Magnetic sensors; Piezoelectric films; Semiconductor thin films; Silicon; Sputtering; Thin film sensors; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602735

Filename

602735