Impact of Quantum Confinement and Coulomb Blockade on the retention of nanocrystals based charge trapping memory

Author

Ya-Hua Peng ; Fei Liu ; Rui Jin ; Kang-Liang Wei ; Gang Du ; Jin-Feng Kang ; Xiao-yan Liu

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

fYear

2012

fDate

Oct. 29 2012-Nov. 1 2012

Firstpage

1

Lastpage

3

Abstract

In this paper, we evaluate the influence of Quantum Confinement and Coulomb Blockade on the retention characteristics of charge trapping memory with incorporating Si nanocrystals into the charge trapping layer using the self-consistent simulator we developed. The effects of Quantum Confinement and Coulomb Blockade under different charge trap densities, temperatures, nanocrystal sizes and tunneling oxide thicknesses are analyzed comprehensively. The results can be used to study the performance and mechanisms of nanocrystals based charge trapping memory.

Keywords

Coulomb blockade; nanostructured materials; random-access storage; silicon compounds; superconductive tunnelling; Si₃N₄; charge trap density; charge trapping memory layer; coulomb blockade; nanocrystal sizing; nanocrystals retention characteristics; quantum confinement; self-consistent simulator; tunneling oxide thickness; Charge carrier processes; Logic gates; Nanocrystals; Potential well; Silicon; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on

Conference_Location

Xi´an

Print_ISBN

978-1-4673-2474-8

Type

conf

DOI

10.1109/ICSICT.2012.6467854

Filename

6467854