Modeling IGBT turn-off in hard- and soft-switching applications

Author

Trivedi, Malay ; Shenai, Krishna

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

1

fYear

1997

fDate

23-27 Feb 1997

Firstpage

156

Abstract

The turn-off of IGBTs in hard- and soft-switching converters is analysed using nonquasi-static analysis. It is shown that while the turn-off current waveform for hard-switching is governed solely by the device for a particular value of on-state current and bus voltage, turn-off current waveform for soft-switching is strongly dependent on device-circuit interactions, so that a trade-off between turn-off loss and switching time can be made using external circuit elements. Models are developed to explain IGBT turn-off for both hardand soft-switching conditions. Hard-switching considers both inductive and resistive loads. Calculated results are validated by comparison with measurements and two-dimensional numerical simulations

Keywords

insulated gate bipolar transistors; losses; power convertors; power semiconductor switches; semiconductor device models; switching circuits; IGBT turn-off modelling; bus voltage; hard-switching converters; inductive loads; nonquasi-static analysis; on-state current; resistive loads; soft-switching converters; turn-off current waveform; two-dimensional numerical simulations; Analytical models; Application software; Bipolar transistors; Boundary conditions; Current supplies; Equations; Insulated gate bipolar transistors; MOSFET circuits; Numerical simulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1997. APEC '97 Conference Proceedings 1997., Twelfth Annual

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-3704-2

Type

conf

DOI

10.1109/APEC.1997.581447

Filename

581447