Large-signal model of triple-gate MESFET/PHEMT for switch applications

Author

Wei, C.J. ; Johnson, D. ; Manzura, O. ; Tkachenko, Y.A. ; Bartle, D.

Author_Institution

Alpha Ind. Inc., Woburn, MA, USA

Volume

2

fYear

1999

fDate

13-19 June 1999

Firstpage

745

Abstract

A large-signal model of triple-gate MESFETs/PHEMTs is developed for switch applications. The devices are represented as multiple transistors connected in series. Systematic extraction procedure, including extrinsic parameters, is described. The model has been verified by comparing simulated dc characteristics, S-parameters and power performance of switches with measured results. As an example of applications, a feed-through circuit is simulated and preliminary experimental data supports the validity of the model.

Keywords

S-parameters; microwave field effect transistors; microwave power transistors; microwave switches; power HEMT; power MESFET; power semiconductor switches; semiconductor device models; S-parameters; extrinsic parameters; feed-through circuit; large-signal model; multiple transistors; simulated dc characteristics; switch applications; systematic extraction procedure; triple-gate MESFET; triple-gate PHEMT; Circuit simulation; Circuit testing; Electrical resistance measurement; Equations; Equivalent circuits; MESFET circuits; PHEMTs; Power system modeling; Semiconductor device modeling; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.779867

Filename

779867