DocumentCode
3422733
Title
High wiring density Cu-polyimide thin film multilayer circuit which is realized by the vertical plated small via
Author
Matsushima, Naoki ; Yamazaki, Tetsuya ; Sotokawa, Hideo ; Kojima, Hiroyuki ; Shigi, Hidetaka
Author_Institution
Production Eng. Res. Lab., Hitachi Ltd., Yokohama, Japan
fYear
1995
fDate
4-6 Dec 1995
Firstpage
97
Lastpage
100
Abstract
A fabrication process for Cu-polyimide thin film multilayer circuit has been developed for advanced multichip module. The multilayer circuit realizes a high wiring density circuit by applying Cu studs which are deposited by electroplating using the guide patterns made of thick positive photoresist, photosensitive polyimide for insulating layers which has low reactivity against Cu, and a polishing process for planarizing dielectric layers. This paper reports on the structure of the circuit and on the thin film process technology
Keywords
copper; electroplating; multichip modules; polymer films; thin film circuits; Cu; Cu-polyimide thin film multilayer circuit; dielectric layer; electroplated stud; fabrication; insulating layer; multichip module; photoresist; planarization; polishing; vertical plated small via; wiring density; Chromium; Circuit testing; Dielectric thin films; Fabrication; High performance computing; Nonhomogeneous media; Polyimides; Resists; Thin film circuits; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
Conference_Location
Omiya
Print_ISBN
0-7803-3622-4
Type
conf
DOI
10.1109/IEMT.1995.541002
Filename
541002
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