Preparation and property of tetragonal zirconia thin films for oxygen sensor

Author

Nakao, Masato ; Sato, Harunobu ; Kamimura, Kiichi ; Onuma, Yoshiharu

Author_Institution

Fac. of Eng., Shinshu Univ., Nagano, Japan

fYear

1995

fDate

4-6 Dec 1995

Firstpage

162

Lastpage

165

Abstract

Tetragonal yttria stabilized zirconia (YSZ) films were deposited on a silicon dioxide substrate by rf magnetron sputtering. Films were characterized by X-ray diffraction, RHEED and AFM. The X-ray diffraction peaks depended on the substrate temperature, and the highest peak was observed for films deposited at 400°C. The temperature dependence of resistance was measured. The resistance of the YSZ film decreased rapidly with increasing temperature. An oxygen sensor with a planar structure was fabricated on a single crystal silicon wafer using the tetragonal YSZ film. The sensor showed well defined limiting-current characteristics and a sensitivity of 7.5 μA/% at 20 mTorr

Keywords

X-ray diffraction; atomic force microscopy; gas sensors; ionic conductivity; reflection high energy electron diffraction; sputter deposition; yttrium compounds; zirconium compounds; 20 mtorr; 400 C; AFM; O₂; O₂ sensor; O^2- ion conductivity; RHEED; SiO₂; SiO₂ substrate; X-ray diffraction; Y₂O₃-ZrO₂; limiting-current characteristics; planar structure; rf magnetron sputtering; sensitivity; single crystal Si wafer; substrate temperature; temperature dependence of resistance; tetragonal YSZ films; Electrical resistance measurement; Semiconductor films; Sensor phenomena and characterization; Silicon compounds; Sputtering; Substrates; Temperature dependence; Temperature sensors; Transistors; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International

Conference_Location

Omiya

Print_ISBN

0-7803-3622-4

Type

conf

DOI

10.1109/IEMT.1995.541018

Filename

541018