DocumentCode
3425371
Title
Transport models for advanced device simulation-truth or consequences?
Author
Laux, S.E. ; Fischetti, M.V.
Author_Institution
Div. of Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
1995
fDate
2-3 Oct 1995
Firstpage
27
Lastpage
34
Abstract
An overview of three methods currently employed in advanced semiconductor device simulation is given, together with results for a model n+-n-n+ structure. The Monte Carlo, energy transport and spherical harmonic expansion methods are discussed from the perspective of a Monte Carlo enthusiast
Keywords
Monte Carlo methods; carrier mobility; harmonic analysis; semiconductor device models; Monte Carlo method; carrier transport models; energy transport method; model n+-n-n+ structure; semiconductor device simulation; spherical harmonic expansion method; Computer industry; High definition video; Matter waves; Monte Carlo methods; Particle scattering; Physics; Semiconductor device modeling; Semiconductor devices; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493859
Filename
493859
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