• DocumentCode
    3425559
  • Title

    Hot-carrier effects in deep submicron thin film SOI MOSFETs

  • Author

    Renn, S.H. ; Pelloie, J.L. ; Balestra, F.

  • Author_Institution
    CNRS, Grenoble, France
  • fYear
    1996
  • fDate
    8-11 Dec. 1996
  • Firstpage
    877
  • Lastpage
    880
  • Abstract
    Hot-carrier effects are thoroughly investigated in deep submicron N- and P-channel SOI MOSFETs, for gate lengths down to sub-0.1 /spl mu/m. Three main types of hot-carrier injections (maximum gate current, maximum substrate current and parasitic bipolar transistor action) are studied. A reliable lifetime prediction is proposed using accurate time-dependent laws for both N- and P-channel SOI MOSFETs.
  • Keywords
    MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; thin film transistors; 0.1 micron; N-channel SOI MOSFET; P-channel SOI MOSFET; Si; deep submicron SOI MOSFETs; hot-carrier injection; maximum gate current; maximum substrate current; parasitic bipolar transistor action; reliable lifetime prediction; thin film SOI MOSFETs; time-dependent laws; Aging; Bipolar transistors; Degradation; Electromagnetic scattering; Hot carrier effects; MOS devices; MOSFET circuits; Stress; Threshold voltage; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996. IEDM '96., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-3393-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1996.554119
  • Filename
    554119
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3425559