DocumentCode
3426948
Title
A two-phase CCD register with charge injected floating gate electrodes
Author
Hatano, K. ; Yamada, T. ; Nakashiba, Y. ; Furumiya, M. ; Morimoto, M. ; Nakano, T. ; Kawakami, Y. ; Taniji, Y. ; Mutoh, N. ; Orihara, K. ; Teranishi, N. ; Hokari, Y.
Author_Institution
ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
903
Lastpage
906
Abstract
Reported here is a two-phase CCD register that features charge injected floating gate electrodes. Each transfer electrode (including both barrier and storage electrodes) contains both a floating gate and a control gate. A potential barrier under each barrier electrode is formed by injecting electrons into the floating gate, resulting in barrier regions which are self-aligned with the barrier electrodes. A 50-stage CCD register has been successfully fabricated and operated at a 5 MHz clock frequency.
Keywords
CCD image sensors; electric charge; electrodes; 5 MHz; charge injected floating gate electrodes; control gate; two-phase CCD register; Charge coupled devices; Electrodes; Electrons; Image storage; Laboratories; Microelectronics; National electric code; Testing; Ultra large scale integration; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554125
Filename
554125
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