• DocumentCode
    3426948
  • Title

    A two-phase CCD register with charge injected floating gate electrodes

  • Author

    Hatano, K. ; Yamada, T. ; Nakashiba, Y. ; Furumiya, M. ; Morimoto, M. ; Nakano, T. ; Kawakami, Y. ; Taniji, Y. ; Mutoh, N. ; Orihara, K. ; Teranishi, N. ; Hokari, Y.

  • Author_Institution
    ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan
  • fYear
    1996
  • fDate
    8-11 Dec. 1996
  • Firstpage
    903
  • Lastpage
    906
  • Abstract
    Reported here is a two-phase CCD register that features charge injected floating gate electrodes. Each transfer electrode (including both barrier and storage electrodes) contains both a floating gate and a control gate. A potential barrier under each barrier electrode is formed by injecting electrons into the floating gate, resulting in barrier regions which are self-aligned with the barrier electrodes. A 50-stage CCD register has been successfully fabricated and operated at a 5 MHz clock frequency.
  • Keywords
    CCD image sensors; electric charge; electrodes; 5 MHz; charge injected floating gate electrodes; control gate; two-phase CCD register; Charge coupled devices; Electrodes; Electrons; Image storage; Laboratories; Microelectronics; National electric code; Testing; Ultra large scale integration; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1996. IEDM '96., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-3393-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1996.554125
  • Filename
    554125