DocumentCode
3428222
Title
Modeling of the substrate effect in high-speed Si-bipolar ICs
Author
Pfost ; Rein, H.M. ; Holzwarth, T.
Author_Institution
AG Halbleiterbauelemente, Ruhr-Univ., Bochum, Germany
fYear
1995
fDate
2-3 Oct 1995
Firstpage
182
Lastpage
185
Abstract
The contribution of the p- substrate and channel stopper on the equivalent circuits of Si-bipolar transistors and bond pads are theoretically and experimentally investigated up to very high frequencies. Equivalent substrate circuits are derived and verified by numerical simulation using a new computer program. The validity of both the numerical simulation results and the equivalent circuits are checked by on-wafer measurements up to 20 GHz
Keywords
bipolar integrated circuits; circuit analysis computing; elemental semiconductors; equivalent circuits; integrated circuit modelling; silicon; substrates; 20 GHz; Si; Si bipolar transistors; bond pads; channel stopper; computer program; equivalent circuits; high-speed bipolar ICs; modeling; numerical simulation; p- substrate; substrate effect; Bonding; Capacitors; Carbon capture and storage; Circuit simulation; Dielectric substrates; Equivalent circuits; Frequency; Microelectronics; Numerical simulation; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493893
Filename
493893
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