A 5.8 GHz low noise amplifier for wireless LAN applications in silicon bipolar technology

Author

Schuppener, Gerd ; Mokhtari, Mehran ; Kerzar, Boris

Author_Institution

Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden

Volume

2

fYear

1999

fDate

5-8 Sep 1999

Firstpage

773

Abstract

A monolithic low-noise amplifier for operation in the 5.8 GHz band is described. Different versions have been implemented each operating over a different range of supply voltage. At 5 V, the amplifier´s gain is about 16 dB, with a noise figure of 4.1 dB and 1 dB compression point at -15 dBm input power. The circuits have been designed utilizing Ericsson Components 0.6 micron silicon bipolar technology (P71), featuring n-p-n transistors with f_T and f_max of about 20 GHz

Keywords

MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; elemental semiconductors; integrated circuit noise; silicon; wireless LAN; 0.6 micron; 16 dB; 4.1 dB; 5 V; 5.8 GHz; Ericsson Components technology; Si; Si bipolar technology; inductor model; low noise amplifier; monolithic LNA; onchip spiral inductors; wireless LAN applications; Circuits; Current density; Impedance matching; Isolation technology; Local area networks; Low-noise amplifiers; Noise figure; Radiofrequency amplifiers; Silicon; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on

Conference_Location

Pafos

Print_ISBN

0-7803-5682-9

Type

conf

DOI

10.1109/ICECS.1999.813223

Filename

813223