Optical and structural properties of thin films of ZnS grown by atomic layer epitaxy

Author

Guziewicz, E. ; Godlewski, M. ; Cricenti, A. ; Girasole, M. ; Kopalko, K. ; Szczerbakow, A.

Author_Institution

Inst. of Phys., Polish Acad. of Sci., Warsaw, Poland

fYear

2001

fDate

26-30 June 2001

Firstpage

140

Lastpage

141

Abstract

Summary form only given. We evaluate structural quality and surface morphology of ZnS films grown by ALE. We study influence of film morphology and of growth conditions on optical properties of these films. Results of atomic force microscopy (AFM), scanning electron (SEM) and cathodoluminescence (CL) microscopy and of photoluminescence (PL) investigations of ZnS layers grown on GaAs substrates by three different methods are discussed.

Keywords

II-VI semiconductors; atomic force microscopy; atomic layer epitaxial growth; cathodoluminescence; photoluminescence; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; surface structure; zinc compounds; AFM; ALE; GaAs; GaAs substrates; SEM; ZnS; atomic layer epitaxy; cathodoluminescence; photoluminescence; structural quality; surface morphology; thin films; Atom optics; Atomic force microscopy; Atomic layer deposition; Electron optics; Gallium arsenide; Optical films; Photoluminescence; Scanning electron microscopy; Surface morphology; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Conference_Location

Zakopane, Poland

Print_ISBN

0-7803-7136-4

Type

conf

DOI

10.1109/WBL.2001.946577

Filename

946577