DocumentCode
3429983
Title
Temperature dependence of optical energy gap of GaSe
Author
Kepinska, M. ; Kovalyuk, Z. ; Murri, R. ; Nowak, M.
Author_Institution
Inst. of Phys., Silesian Univ. of Technol., Katowice, Poland
fYear
2001
fDate
26-30 June 2001
Firstpage
146
Abstract
Summary form only given. Thin films and wafers of cleaved crystalline GaSe were investigated using optical reflectance (R) and transmittance (T) for wavelengths from 200 nm to 1050 nm. The investigations were performed at different temperatures from 77 K to 333 K using a cryogenic microminiature refrigeration system based on the Joule-Thomson effect. The derived spectra of the real part of the refractive index and the absorption coefficient are presented.
Keywords
III-VI semiconductors; Joule-Thomson effect; absorption coefficients; energy gap; gallium compounds; refractive index; semiconductor thin films; visible spectra; 200 to 1050 nm; 77 to 333 K; GaSe; Joule-Thomson effect; absorption coefficient; layered semiconductor; reflectance; refractive index; temperature dependence; thin films; transmittance; Cryogenics; Crystallization; Gases; Optical films; Optical refraction; Optical variables control; Reflectivity; Refractive index; Refrigeration; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
Conference_Location
Zakopane, Poland
Print_ISBN
0-7803-7136-4
Type
conf
DOI
10.1109/WBL.2001.946581
Filename
946581
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