• DocumentCode
    3429983
  • Title

    Temperature dependence of optical energy gap of GaSe

  • Author

    Kepinska, M. ; Kovalyuk, Z. ; Murri, R. ; Nowak, M.

  • Author_Institution
    Inst. of Phys., Silesian Univ. of Technol., Katowice, Poland
  • fYear
    2001
  • fDate
    26-30 June 2001
  • Firstpage
    146
  • Abstract
    Summary form only given. Thin films and wafers of cleaved crystalline GaSe were investigated using optical reflectance (R) and transmittance (T) for wavelengths from 200 nm to 1050 nm. The investigations were performed at different temperatures from 77 K to 333 K using a cryogenic microminiature refrigeration system based on the Joule-Thomson effect. The derived spectra of the real part of the refractive index and the absorption coefficient are presented.
  • Keywords
    III-VI semiconductors; Joule-Thomson effect; absorption coefficients; energy gap; gallium compounds; refractive index; semiconductor thin films; visible spectra; 200 to 1050 nm; 77 to 333 K; GaSe; Joule-Thomson effect; absorption coefficient; layered semiconductor; reflectance; refractive index; temperature dependence; thin films; transmittance; Cryogenics; Crystallization; Gases; Optical films; Optical refraction; Optical variables control; Reflectivity; Refractive index; Refrigeration; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of
  • Conference_Location
    Zakopane, Poland
  • Print_ISBN
    0-7803-7136-4
  • Type

    conf

  • DOI
    10.1109/WBL.2001.946581
  • Filename
    946581