Electric characterization and plasma processing of nanocrystalline c-BN layers

Author

Werbowy, A. ; Firek, P. ; Szmidt, J. ; Olszyna, A.

Author_Institution

Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland

fYear

2001

fDate

26-30 June 2001

Firstpage

161

Lastpage

162

Abstract

Summary form only given. In this work results of electrical characterization of plasma-synthesized thin nanocrystalline c-BN films, deposited on Si p-type and n-type substrates, are presented, based on capacitance-voltage and current-voltage measurements of MIS Al/BN/Si structures. Results are also shown of structural investigations of the layers (SEM images). Finally, we will demonstrate the possibility of selective dry RF plasma etching of BN layers using various gas mixtures, which is a continuation of our earlier efforts.

Keywords

MIS structures; boron compounds; insulating thin films; nanostructured materials; plasma deposited coatings; scanning electron microscopy; sputter etching; Al; BN; MIS Al/BN/Si structures; SEM images; Si; Si substrates; capacitance-voltage measurements; current-voltage measurements; electrical characterization; gas mixtures; nanocrystalline c-BN layers; plasma processing; plasma-synthesized thin nanocrystalline c-BN films; selective dry RF plasma etching; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Dry etching; Electric variables measurement; Plasma applications; Plasma materials processing; Plasma measurements; Radio frequency; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Conference_Location

Zakopane, Poland

Print_ISBN

0-7803-7136-4

Type

conf

DOI

10.1109/WBL.2001.946587

Filename

946587