AlN for mirror passivation of high power AlGaAs single quantum well separate confinement heterostructure lasers

Author

Jagoda, A. ; Dobrzanski, L. ; Mozdzonek, M. ; Wrobel, S.

Author_Institution

Inst. of Electron. Mater. Technol., Warsaw, Poland

fYear

2001

fDate

26-30 June 2001

Firstpage

183

Lastpage

184

Abstract

The authors propose AlN dielectric layer as a mirror coating for AlGaAs SQW-SCH laser diodes. As a semitransparent (low reflective - LR) coating they use a single AlN layer, and as a high reflective coating (HR) they use six pairs of AlN-Si layers. The measured reflection coefficients for LR and HR coatings and optical output power characteristics for coated and uncoated mirrors are presented. The optical output power of diodes with coated mirrors is two times higher than the optical power of uncoated diodes.

Keywords

III-V semiconductors; aluminium compounds; dielectric thin films; laser mirrors; optical films; passivation; quantum well lasers; reflectivity; AlGaAs; AlN; AlN dielectric layer; AlN-Si; AlN-Si layers; SQW-SCH laser diodes; high power single quantum well separate confinement heterostructure lasers; high reflective coating; low reflective coating; mirror coating; mirror passivation; optical output power characteristics; reflection coefficients; semitransparent coating; Coatings; Dielectrics; Diodes; Mirrors; Optical resonators; Passivation; Potential well; Power generation; Quantum well lasers; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Wide Bandgap Layers, 2001. Abstract Book. 3rd International Conference on Novel Applications of

Conference_Location

Zakopane, Poland

Print_ISBN

0-7803-7136-4

Type

conf

DOI

10.1109/WBL.2001.946596

Filename

946596