Compound Semiconductor Quantum Dots and Nanowires for Optoelectronic Device Applications

Author

Jagadish, Chennupati

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT

fYear

2007

fDate

24-27 June 2007

Firstpage

1

Lastpage

1

Abstract

In this talk, main activities and progress in the areas of compound semiconductor quantum dots and nanowires, and device integration in Semiconductor Optoelectronics and Nanotechnology Group at the Australian National University will be addressed.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; infrared detectors; integrated optics; integrated optoelectronics; nanotechnology; nanowires; optical materials; optical waveguides; photodetectors; self-assembly; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; semiconductor quantum dots; semiconductor quantum wells; semiconductor quantum wires; stress relaxation; transmission electron microscopy; Australian National University; GaAs; GaAs (111)B substrate; GaSb-GaAs; HRTEM; III-V compound semiconductor quantum dots; MOCVD; device integration; infrared photodetector; metalorganic chemical vapor deposition; nanotechnology; quantum well waveguide; self-assembled quantum dot; semiconductor heterostructure nanowires; semiconductor laser; semiconductor optoelectronics; strain relaxation; Chemical lasers; Gallium arsenide; Laser theory; MOCVD; Nanowires; Optoelectronic devices; Photodetectors; Quantum dot lasers; Quantum dots; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Internet, 2007 and the 2007 32nd Australian Conference on Optical Fibre Technology. COIN-ACOFT 2007. Joint International Conference on

Conference_Location

Melbourne, VIC

Print_ISBN

978-0-9775657-3-3

Electronic_ISBN

978-0-9775657-3-3

Type

conf

DOI

10.1109/COINACOFT.2007.4519077

Filename

4519077