DocumentCode
3432687
Title
An Improved Parasitic Resistance Model of Nano-Scale MOSFET
Author
Hao Xu-Chun ; Dai Yue-Hua ; Chen Jun-ning ; Ke Dao-Ming ; Sun Jia-E
Author_Institution
Dept. of Electron. Sci. & Technol., Anhui Univ., Hefei
fYear
2008
fDate
12-14 Oct. 2008
Firstpage
1
Lastpage
3
Abstract
The reason that existing models have underestimated the parasitic resistance of nano-scale MOSFET biased at low gate voltage was discussed. Then an improved resistance model was proposed. Finally, the influences of several technical parameters on the parasitic resistance were analyzed through numerical simulation, and some directions and measures might be taken to reduce the parasitic resistance.
Keywords
MOSFET; electric resistance; nanotechnology; semiconductor device models; low gate voltage; nanoscale MOSFET; parasitic resistance model; Electric resistance; Electrical resistance measurement; Electronic mail; Electronics industry; Low voltage; MOS devices; MOSFET circuits; Numerical simulation; Parasitic capacitance; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Communications, Networking and Mobile Computing, 2008. WiCOM '08. 4th International Conference on
Conference_Location
Dalian
Print_ISBN
978-1-4244-2107-7
Electronic_ISBN
978-1-4244-2108-4
Type
conf
DOI
10.1109/WiCom.2008.428
Filename
4678337
Link To Document