New evaluation method for reliability of poly-Si thin film transistors using pico-second time-resolved emission microscope

Author

Uraoka, Y. ; Hirai, N. ; Yano, H. ; Hatayama, T. ; Fuyuki, T.

Author_Institution

Mater. Sci., Nara Inst. of Sci. & Technol., Ikoma, Japan

fYear

2003

fDate

17-20 March 2003

Firstpage

173

Lastpage

177

Abstract

We have analyzed degradation of n-channel TFTs under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission in the pulse fall edge for the first time. We have also obtained a hot electron current during the pulse fall using a device simulation that took the transient effect into consideration. Based on the reasonable agreement between the experimental emission intensity and the theoretical current, we proposed a new degradation model.

Keywords

electric current; electron microscopy; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device testing; silicon; thin film transistors; transient analysis; degradation model; device simulation; dynamic stress; emission intensity; n-channel TFT; pico-second time-resolved emission microscope; poly-Si thin film transistors; pulse fall edge emission; pulse fall hot electron current; reliability evaluation method; transient effect; Degradation; Driver circuits; Fabrication; Frequency; Materials science and technology; Microscopy; Stress; Temperature; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2003. International Conference on

Print_ISBN

0-7803-7653-6

Type

conf

DOI

10.1109/ICMTS.2003.1197457

Filename

1197457