Test structure design considerations for RF-CV measurements on leaky dielectrics

Author

Schmitz, J. ; Cubaynes, F.N. ; Havens, R.J. ; de Kort, R. ; Scholten, A.J. ; Tiemeijer, L.F.

Author_Institution

Philips Res. Leuven, Belgium

fYear

2003

fDate

17-20 March 2003

Firstpage

181

Lastpage

185

Abstract

We present a MOS capacitance-voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm². The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion and inversion.

Keywords

CMOS integrated circuits; capacitance; dielectric thin films; integrated circuit design; integrated circuit testing; leakage currents; radiofrequency integrated circuits; CMOS device dimensions scaling; MOS capacitance-voltage measurement methodology; MOS parameter extraction accumulation; RF measurement frequencies; RF test structures; RF-CV measurements; accumulation; depletion; gate leakage current density robustness; inversion; leaky dielectrics; test methods; test structure design; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Density measurement; Design methodology; Dielectric measurements; Leakage current; Radio frequency; Robustness; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2003. International Conference on

Print_ISBN

0-7803-7653-6

Type

conf

DOI

10.1109/ICMTS.2003.1197458

Filename

1197458