Study on STI mechanical stress induced variations on advanced CMOSFETs

Author

Sheu, Y.M. ; Doong, Kelvin Y Y ; Lee, C.H. ; Chen, M.J. ; Diaz, C.H.

Author_Institution

Taiwan Semicond. Manuf. Co., Taiwan

fYear

2003

fDate

17-20 March 2003

Firstpage

205

Lastpage

208

Abstract

Impact of shallow trench isolation (STI) induced mechanical stress on MOSFET drive current is investigated by means of a full-matrix active area layout experiment in advanced CMOS process technology. It turns out remarkably that transistor drive current density per unit width is not independent of the active area size, particularly along the direction of the channel current flow. Opposite sensitivities are observed between n- and p-MOSFETs with respect to lateral active area size. The role of gate placement inside the active area is also addressed. A statistical analysis scheme to find principal components is carried out as well.

Keywords

CMOS integrated circuits; MOSFET; integrated circuit layout; integrated circuit modelling; integrated circuit testing; isolation technology; statistical analysis; CMOS process technology; CMOSFET; MOSFET drive current; STI mechanical stress induced variations; active area size; channel current flow direction; full-matrix active area layout; gate placement; lateral active area size; n-MOSFET; p-MOSFET; shallow trench isolation induced mechanical stress; statistical analysis; transistor drive current density per unit width; CMOS process; CMOS technology; CMOSFETs; Compressive stress; Degradation; Kelvin; MOSFET circuits; Silicon; Threshold voltage; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2003. International Conference on

Print_ISBN

0-7803-7653-6

Type

conf

DOI

10.1109/ICMTS.2003.1197462

Filename

1197462