DocumentCode
3433669
Title
Wideband 2.5 GHz VCO with active inductance in a 0.25 µm CMOS technology
Author
Medjahdi, Abdelkrim ; Calmon, Francis
Author_Institution
INL, Univ. of Lyon, Villeurbanne, France
fYear
2009
fDate
13-16 Dec. 2009
Firstpage
735
Lastpage
738
Abstract
We have designed a voltage controlled oscillator (VCO) with a differential architecture containing two active inductance cells. This compact circuit (˜60??75 μm2) was realized in a 0.25 μm MOSFET technology. The oscillator can operate on a wide frequency band from 1.5 GHz up to 2.8 GHz adjustable by a tuning voltage between 0.6 V and 1.2 V. This oscillator has a static consumption of 13 mW (VCO core only) under 2.5 V supply voltage and presents a phase noise of -93 dBc/Hz @ 1 MHz.
Keywords
CMOS integrated circuits; UHF integrated circuits; UHF oscillators; phase noise; voltage-controlled oscillators; CMOS technology; MOSFET technology; active inductance cells; compact circuit; differential architecture; frequency 1 MHz; frequency 1.5 GHz to 2.8 GHz; phase noise; power 13 mW; voltage 0.6 V to 1.2 V; voltage 2.5 V; voltage controlled oscillator; wideband VCO; Active inductors; CMOS technology; Capacitance; Frequency; Inductance; MOSFET circuits; Silicon; Spirals; Voltage-controlled oscillators; Wideband; Active Inductance; VCO;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Circuits, and Systems, 2009. ICECS 2009. 16th IEEE International Conference on
Conference_Location
Yasmine Hammamet
Print_ISBN
978-1-4244-5090-9
Electronic_ISBN
978-1-4244-5091-6
Type
conf
DOI
10.1109/ICECS.2009.5410792
Filename
5410792
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