Dopant redistribution and activation in thin film SOI/SIMOX substrates

Author

Robinson, A.K. ; Bussmann, U. ; Hemment, P.L.F. ; Sharma, V. ; Kilner, J.A.

Author_Institution

Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK

fYear

1990

fDate

2-4 Oct 1990

Firstpage

71

Lastpage

72

Abstract

Experiments were performed to determine the transport properties, electrical activity, and redistribution of dopants implanted into SIMOX samples with different silicon layer thicknesses. High temperature annealed SIMOX samples with silicon film thicknesses of 2000 Å (SIMOX1) and 3000 Å (SIMOX2) were implanted with As⁺, Sb⁺, B⁺, and P⁺ ions. Activation of the dopant was achieved by annealing samples at either 950°C or 1150°C in flowing nitrogen gas in a resistivity heated furnace. Temperature dependence of the sheet resistance following As⁺ ion implantation into the same set of samples is presented. The main difference is seen above 800°C when significant As diffusion occurs, which leads to uniform doping in the silicon layer and a value of sheet resistance which is temperature independent above 1000°C

Keywords

CMOS integrated circuits; annealing; doping profiles; elemental semiconductors; integrated circuit technology; ion implantation; semiconductor-insulator boundaries; silicon; CMOS devices; Si-SiO₂; Si:As; Si:B; Si:P; Si:Sb; annealed SIMOX samples; annealing; dopant activation; electrical activity; ion implantation; redistribution of dopants; sheet resistance; temperature dependence; thin film SOI/SIMOX substrates; transport properties; Annealing; Conductivity; Doping; Furnaces; Ion implantation; Nitrogen; Semiconductor films; Silicon; Temperature dependence; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

SOS/SOI Technology Conference, 1990., 1990 IEEE

Conference_Location

Key West, FL

Print_ISBN

0-87942-573-3

Type

conf

DOI

10.1109/SOSSOI.1990.145714

Filename

145714