Characterization of the broadband transmission behavior of interconnections on silicon substrates

Author

Zaage, S. ; Grotelüschen, E.

Author_Institution

Hannover Univ., Germany

fYear

1993

fDate

1993

Firstpage

268

Lastpage

277

Abstract

Some characteristics of the transmission behavior of interconnections on conductive silicon substrates are presented. With regard to the signal propagation on high-speed digital circuits the broadband behavior of the lines is of special interest. The characteristic impedance and the propagation constant of the lines are determined experimentally by microwave measurements. The influence of the line geometry, the substrate resistivity and the signal frequency on the transmission behavior are clarified. Based on the results of the measurements, the suitability of the conventional RLC line model for time-domain simulations of the transmission characteristics of interconnections on silicon substrates is investigated.

Keywords

VLSI; digital integrated circuits; electric impedance; integrated circuit technology; packaging; time-domain analysis; transmission line theory; RLC line model; WSI; broadband transmission behavior; characteristic impedance; conductive Si substrates; high-speed digital circuits; interconnections; line geometry; microwave measurements; propagation constant; signal frequency; signal propagation; substrate resistivity; time-domain simulations; wafer scale integration; Conductivity; Digital circuits; Frequency; Geometry; Impedance measurement; Integrated circuit interconnections; Microwave measurements; Microwave propagation; Propagation constant; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Wafer Scale Integration, 1993. Proceedings., Fifth Annual IEEE International Conference on

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-0867-0

Type

conf

DOI

10.1109/ICWSI.1993.255251

Filename

255251