• DocumentCode
    3434393
  • Title

    Elimination of kink effect in fully depleted buried channel SOI MOSFET based on silicon direct bonding technology

  • Author

    Tong, Q.-Y.

  • Author_Institution
    Southeast Univ., Nanjing
  • fYear
    1990
  • fDate
    2-4 Oct 1990
  • Firstpage
    99
  • Lastpage
    100
  • Abstract
    A new SOI fully depleted buried channel MOSFET (FD BCMOS) has been developed which is different from conventional surface buried channel MOS devices in which a pn junction exists at the channel surface. Moreover, the pn junction is totally eliminated in the device structure. Numerical simulation and practical fabrication have demonstrated that no kink effect is seen and the device has excellent performance for VLSI applications due to the absence of the pn junction and superior material quality prepared by silicon wafer direct bonding technology
  • Keywords
    VLSI; insulated gate field effect transistors; semiconductor-insulator boundaries; SOI MOSFET; Si-SiO2; VLSI; direct bonding technology; fabrication; fully depleted buried channel; kink effect elimination; performance; simulation; MOS devices; MOSFET circuits; Microelectronics; Numerical simulation; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage; Transconductance; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Conference, 1990., 1990 IEEE
  • Conference_Location
    Key West, FL
  • Print_ISBN
    0-87942-573-3
  • Type

    conf

  • DOI
    10.1109/SOSSOI.1990.145728
  • Filename
    145728
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3434393