• DocumentCode
    3434494
  • Title

    Modeling of thin film depletion-mode SOI MOSFETs

  • Author

    Balestra, F. ; Benachir, M. ; Ghibaudo, G. ; Brini, J.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., Inst. Nat. Polytech., Grenoble, France
  • fYear
    1990
  • fDate
    2-4 Oct 1990
  • Firstpage
    107
  • Lastpage
    108
  • Abstract
    No reliable analytical model exists for the case of fully depleted thin film depletion-mode (DM) SOI MOSFETs. The coupling between the front and back interfaces is particularly important in the weak accumulation regime. The authors propose analytical models for fully depleted DM SOI MOSFETs, by taking into consideration all the parameters of the SOI structure. The case of two or three interfaces (with a Si substrate) can be modeled
  • Keywords
    insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; SOI MOSFETs; Si-SiO2; analytical models; fully depleted; thin film depletion-mode; weak accumulation regime; Capacitance; Delta modulation; Doping profiles; Electron mobility; MOSFETs; Semiconductor films; Semiconductor process modeling; Transconductance; Transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Conference, 1990., 1990 IEEE
  • Conference_Location
    Key West, FL
  • Print_ISBN
    0-87942-573-3
  • Type

    conf

  • DOI
    10.1109/SOSSOI.1990.145732
  • Filename
    145732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3434494