DocumentCode
3434561
Title
Polycrystalline silicon thin-film CMOS technology: the poor man´s SOI
Author
Ipri, A.C. ; Dolny, G. ; Policastro, S. ; Stewart, R. ; Peters, D.
Author_Institution
David Sarnoff Res. Center, Princeton, NJ, USA
fYear
1990
fDate
2-4 Oct 1990
Firstpage
113
Lastpage
114
Abstract
The authors discuss the electrical characteristics of thin film polycrystalline silicon transistors and their various uses. The first major application of polysilicon transistors was in the fabrication of active matrix liquid crystal displays. Over 40000 devices are fabricated on a four inch glass wafer and are used to make write only dynamic memory type full wafer arrays. The second major application of polysilicon transistors is as a replacement for the polysilicon load resistor in static memories. Future applications include circuits where both bulk silicon transistors and low performance silicon-on-insulator polysilicon transistors are used in the same integrated circuit. Typical of these applications are arrays where different substrate biases are needed and where junction isolation is insufficient for the application
Keywords
CMOS integrated circuits; insulated gate field effect transistors; liquid crystal displays; semiconductor-insulator boundaries; silicon; CMOS transistors; SOI; Si-SiO2; active matrix liquid crystal displays; bipolar transistors; polycrystalline Si; polysilicon transistors; static memories; thin-film CMOS technology; write only dynamic memory type full wafer arrays; Active matrix liquid crystal displays; Active matrix technology; CMOS technology; Electric variables; Fabrication; Glass; Resistors; Semiconductor thin films; Silicon; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOS/SOI Technology Conference, 1990., 1990 IEEE
Conference_Location
Key West, FL
Print_ISBN
0-87942-573-3
Type
conf
DOI
10.1109/SOSSOI.1990.145735
Filename
145735
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