Poly silicon film formation by nickel-induced-lateral crystallization and pulsed rapid thermal annealing

Author

Leung, T.C. ; Cheng, C.F. ; Poon, M.C.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

fYear

2001

fDate

2001

Firstpage

93

Lastpage

96

Abstract

Pulsed rapid thermal annealing (PRTA) is applied to polysilicon formation by nickel induced lateral crystallization (NILC). It can reduce the annealing time from tens of hours to several minutes. The growth rate increases greatly from 0.025 μm/minute to 2.5 μm/minute. The performance of the thin film transistor formed by PRTA is similar to conventional constant temperature annealing (CTA). The new method is highly recommended for poly-Si formation in fast throughput and low cost device applications

Keywords

crystallisation; elemental semiconductors; nickel; rapid thermal annealing; semiconductor growth; silicon; thin film transistors; NILC; Ni; Si; annealing time; constant temperature annealing; growth rate; low cost device applications; nickel-induced-lateral crystallization; poly-Si formation; polysilicon film formation; polysilicon formation; pulsed RTA; pulsed rapid thermal annealing; thin film transistor performance; throughput; Aluminum; Amorphous silicon; Crystallization; Hafnium; Nickel; Optical films; Rapid thermal annealing; Semiconductor films; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. Proceedings. 2001 IEEE Hong Kong

Conference_Location

Hong Kong

Print_ISBN

0-7803-6714-6

Type

conf

DOI

10.1109/HKEDM.2001.946926

Filename

946926