DocumentCode
3434804
Title
Recent results concerning the influence of hydrogen on the bias temperature instability
Author
Pobegen, Gregor ; Nelhiebel, Michael ; Grasser, Tibor
Author_Institution
KAI - Kompetenzzentrum fur Automobil- und Industrieelektron., Villach, Austria
fYear
2012
fDate
14-18 Oct. 2012
Firstpage
54
Lastpage
58
Abstract
Alongside the intensive debate concerning the influence of hydrogen on NBTI we present several details which have received little or no attention in the past. We show experimental evidence that hydrogen does not only passivate interface traps but also positive oxide charges or border traps. Besides passivation, hydrogen increases the overall drift capability of a device under NBTS, thereby increasing the sum of both precursors and activated defects. Furthermore hydrogen passivation has a positive effect on PBTI, presumably through the passivation of pre-existing oxide traps.
Keywords
hydrogen; interface states; passivation; H; NBTI; NBTS; activated defects; bias temperature instability; border traps; oxide traps; passivate interface traps; passivation; positive oxide charges; Hydrogen; Logic gates; MOSFET circuits; Passivation; Reliability; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location
South Lake Tahoe, CA
ISSN
1930-8841
Print_ISBN
978-1-4673-2749-7
Type
conf
DOI
10.1109/IIRW.2012.6468920
Filename
6468920
Link To Document