• DocumentCode
    3435033
  • Title

    Residual defects in SIMOX: threading dislocations and pipes

  • Author

    Roitman, P. ; Edelstein, M. ; Krause, S. ; Visitserngtrukul, S.

  • Author_Institution
    NIST, Gaithersburg, MD, USA
  • fYear
    1990
  • fDate
    2-4 Oct 1990
  • Firstpage
    154
  • Lastpage
    155
  • Abstract
    Some techniques are discussed for monitoring dislocations and stacking faults in SIMOX (separation by implantation of oxygen) films. Also, a different type of defect, a silicon pipe running through the buried oxide, has been observed. The origin of these defects and a technique for detecting them are described
  • Keywords
    dislocations; elemental semiconductors; semiconductor-insulator boundaries; silicon; stacking faults; SIMOX; Si-SiO2; buried oxide; pipes; residual defects; stacking faults; threading dislocations; Annealing; Circuit faults; Etching; Implants; Monitoring; NIST; Scanning electron microscopy; Semiconductor films; Silicon; Stacking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOS/SOI Technology Conference, 1990., 1990 IEEE
  • Conference_Location
    Key West, FL
  • Print_ISBN
    0-87942-573-3
  • Type

    conf

  • DOI
    10.1109/SOSSOI.1990.145758
  • Filename
    145758
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3435033