DocumentCode
3436870
Title
Monte Carlo device simulation on PARAM
Author
Harkar, Ashwani ; Shaligram, A.D. ; Ghaisas, S.V. ; Sundararajan, V.
Author_Institution
Dept. of Electron. Sci., Pune Univ., India
fYear
1996
fDate
19-22 Dec 1996
Firstpage
33
Lastpage
35
Abstract
Self-consistent ensemble Monte Carlo technique has been employed to obtain the velocity profiles for the n+-n-n+ structure. The simulator solves the Poisson equation at regular time intervals to update the electric field distribution and uses cloud-in-cell method for charge assignment. This report presents the parallel implementation of the device simulation on 9000/AA platform of CDAC. A linear speedup has been realised on an 8-node machine
Keywords
Monte Carlo methods; electronic engineering computing; parallel programming; semiconductor device models; 9000/AA; Monte Carlo technique; PARAM; Poisson equation; device simulation; linear speedup; parallel implementation; velocity profiles; Anodes; Cathodes; Computational modeling; Doping; History; Monte Carlo methods; Parallel processing; Poisson equations; Semiconductor devices; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
High Performance Computing, 1996. Proceedings. 3rd International Conference on
Conference_Location
Trivandrum
Print_ISBN
0-8186-7557-8
Type
conf
DOI
10.1109/HIPC.1996.565792
Filename
565792
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