Epitaxial orientation-patterning of AlGaAs films for nonlinear optical devices

Author

Pinguet, T.J. ; Eyres, L.A. ; Ebert, C.B. ; Levi, O. ; Fejer, M.M. ; Harris, J.S.

Author_Institution

Solid State Lab., Stanford Univ., CA, USA

fYear

2000

fDate

2000

Firstpage

229

Lastpage

232

Abstract

We have developed an all-epitaxial technique employing GaAs/Ge/GaAs polar-on-nonpolar epitaxy for fabrication of orientation-patterned semiconductor templates, and used it in combination with epitaxial regrowth to produce quasiphasematched nonlinear optical AlGaAs waveguides. We demonstrated second-harmonic generation of 1.55 μm radiation in these devices and found that the measured conversion efficiency (4%/W) is limited by large optical losses attributed to poor regrowth quality of the waveguide layers

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical harmonic generation; optical losses; optical waveguides; 1.55 micron; 4 percent; AlGaAs; AlGaAs films; GaAs; GaAs/Ge/GaAs polar-on-nonpolar epitaxy; Ge; conversion efficiency; epitaxial orientation-patterning; epitaxial regrowth; nonlinear optical devices; optical loss; orientation-patterned semiconductor templates; quasiphasematched nonlinear optical AlGaAs waveguides; regrowth quality; second-harmonic generation; waveguide layers; Epitaxial growth; Gallium arsenide; Loss measurement; Nonlinear optical devices; Nonlinear optics; Optical device fabrication; Optical films; Optical waveguides; Semiconductor films; Semiconductor waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947159

Filename

947159