Effect of gate oxide breakdown on RF device and circuit performance

Author

Yang, Hong ; Yuan, J.S. ; Xiao, Enjun

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Central Florida Univ., Orlando, FL, USA

fYear

2003

fDate

30 March-4 April 2003

Firstpage

1

Lastpage

4

Abstract

The degradation of S-parameters of 0.16 μm NMOS devices due to gate oxide breakdown is examined. An equivalent circuit model for MOSFETs after gate oxide breakdown is proposed. The influence of nMOSFET breakdown on the performance of a low noise amplifier is studied using the equivalent circuit model. Depending on which device and how many fingers breakdown, there is a nonzero probability that the circuit continues to work, in spite of the fact that the performance of S-parameters and noise figure drastically degrades.

Keywords

CMOS analogue integrated circuits; MOSFET; S-parameters; UHF amplifiers; UHF field effect transistors; UHF integrated circuits; equivalent circuits; integrated circuit reliability; microwave field effect transistors; semiconductor device breakdown; semiconductor device models; semiconductor device noise; semiconductor device reliability; 0.16 μm NMOS devices; 0.16 micron; 1.8 GHz; CMOS technology; RF circuits; RF device performance; S-parameter degradation; equivalent circuit model; gate oxide breakdown; low noise amplifier; nMOS-PET; noise figure; nonzero probability; Circuit noise; Circuit optimization; Degradation; Electric breakdown; Equivalent circuits; Low-noise amplifiers; MOS devices; MOSFET circuits; Radio frequency; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Print_ISBN

0-7803-7649-8

Type

conf

DOI

10.1109/RELPHY.2003.1197711

Filename

1197711