• DocumentCode
    3436959
  • Title

    Epitaxial growth of heterostructures based on InAsPSb and GaInAsPSb isoperiodical with GaSb

  • Author

    Vasil´ev, V.I. ; Kuchinskii, V.I. ; Nikitina, I.P. ; Akhmedov, D. ; Smirnov, V.M. ; Vasukov, D.A.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    233
  • Lastpage
    238
  • Abstract
    Quaternary InAsyPzSb1-y-z and pentanary Ga1-xInxAsyPzSb 1-y-z solid solutions isoperiodical with GaSb were grown on GaSb (100) substrates by liquid phase epitaxy (LPE) in 0.02⩽z⩽0.1 and 0.91⩽x⩽0.97; 0.04⩽z⩽0.1 composition ranges respectively. The growth temperature was in the 570-605°C range. Crystalline and photoluminescence (PL) properties of obtained epilayers were investigated. PL intensity of pentanary solid solutions (PSS) is considerably higher, than that of obtained earlier quaternary GaInAsSb with close values of bandgap Eg
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; liquid phase epitaxial growth; optical films; optical materials; photoluminescence; semiconductor epitaxial layers; solid solutions; spectral line intensity; 570 to 605 degC; GaInAsSb; GaSb; GaSb-GaInAsSbP; GaSb-InAsSbP; LPE growth; PL intensity; growth temperature; liquid phase epitaxy; pentanary GaInAsPSb; pentanary solid solutions; photoluminescence; quaternary InAsPSb; semiconductor heterostructures; solid solutions; Boats; Crystallization; Epitaxial growth; III-V semiconductor materials; Indium phosphide; Photodetectors; Photoluminescence; Solids; Substrates; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2000 IEEE International Symposium on
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    0-7803-6258-6
  • Type

    conf

  • DOI
    10.1109/ISCS.2000.947160
  • Filename
    947160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3436959