“Vibrational and optical properties of AlN grown on Si(111)”

Author

Holtz, M. ; Zollner, S. ; Prokofyeva, T. ; Seon, M. ; Vanbuskirk, J. ; Copeland, K. ; Konkar, A. ; Nikishin, S.A. ; Faleev, N.N. ; Temkin, H.

Author_Institution

Dept. of Phys., Texas Tech. Univ., Lubbock, TX, USA

fYear

2000

fDate

2000

Firstpage

251

Lastpage

256

Abstract

We present optical measurements of hexagonal AlN grown by gas-source molecular beam epitaxy on (111)-oriented silicon wafers. Fourier-transform infrared (FTIR) reflectance and absorption measurements are used to determine the E₁- and A₁-symmetry vibrational energies in AlN (TO and LO). FTIR reflectance data are modeled using a non-isotropic dielectric function. The phonon energies are also measured by Raman scattering, which includes the E₂-symmetry phonons, as well as A₁(TO), A₁(LO), and E₁(TO). Ellipsometry measurements between 0.73 and 6.60 eV allow us to determine the optical constants. The energy gap is found to lie between 6.1 and 6.2 eV

Keywords

Fourier transform spectra; III-V semiconductors; Raman spectra; aluminium compounds; dielectric function; ellipsometry; energy gap; infrared spectra; light absorption; optical constants; phonon spectra; reflectivity; semiconductor epitaxial layers; wide band gap semiconductors; (111)-oriented silicon wafers; 0.73 to 6.6 eV; A₁-symmetry vibrational energies; AlN; E₁-symmetry vibrational energies; E₂-symmetry phonons; FTIR reflectance; Fourier-transform infrared reflectance; Raman scattering; Si; Si(111); absorption measurements; ellipsometry; energy gap; gas-source molecular beam epitaxy; hexagonal AlN grown; nonisotropic dielectric function; optical constants; optical measurements; optical properties; phonon energies; vibrational properties; Dielectric measurements; Electromagnetic wave absorption; Energy measurement; Molecular beam epitaxial growth; Optical scattering; Phonons; Reflectivity; Semiconductor device modeling; Silicon; Vibration measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2000 IEEE International Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-6258-6

Type

conf

DOI

10.1109/ISCS.2000.947164

Filename

947164