Moving current filaments in ESD protection devices and their relation to electrical characteristics

Author

Pogany, D. ; Bychikhin, S. ; Gornik, E. ; Denison, M. ; Jensen, N. ; Groos, G. ; Stecher, M.

Author_Institution

Inst. for Solid State Electron., Tech. Univ. of Vienna, Austria

fYear

2003

fDate

30 March-4 April 2003

Firstpage

241

Lastpage

248

Abstract

Dynamics and "travelling" modes of localized moving current filaments in electrostatic discharge (ESD) protection devices during current stress pulses are investigated using backside interferometric thermal mapping methods. The spatio-temporal evolution of the filament along the device width is related to the time evolution of the voltage waveform and to the IV characteristics of the device.

Keywords

current distribution; electrostatic discharge; failure analysis; light interferometry; power bipolar transistors; protection; pulse measurement; semiconductor device reliability; semiconductor device testing; thyristors; ESD protection devices; I-V characteristics; SCR device; backside interferometric thermal mapping methods; current stress pulses; electrical characteristics; electrostatic discharge; localized moving current filaments; moving current filaments; power devices; smart power technology ESD protection test structures; spatio-temporal evolution; transmission line pulser; travelling modes; vertical npn transistor; voltage waveform time evolution; Electric variables; Electrostatic discharge; Electrostatic interference; Holography; Optical refraction; Protection; Testing; Thermal stresses; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International

Print_ISBN

0-7803-7649-8

Type

conf

DOI

10.1109/RELPHY.2003.1197752

Filename

1197752