• DocumentCode
    3438593
  • Title

    Data retention, endurance and acceleration factors of NROM devices

  • Author

    Janai, Meir

  • Author_Institution
    Saifun Semicond. Ltd., Netanya, Israel
  • fYear
    2003
  • fDate
    30 March-4 April 2003
  • Firstpage
    502
  • Lastpage
    505
  • Abstract
    Reliability studies of Saifun NROM devices are presented. Data retention characteristics vs time, temperature and cycling level are explained based on a charge trapping and re-emission model. The thermal acceleration factor between ambient storage and 150°C is shown to be 7×105. Storage life at room temperature after 100K memory cycles is predicted to be in excess of 100 years. A qualification method of NROM devices is discussed in view of these results.
  • Keywords
    CMOS memory circuits; EPROM; integrated circuit reliability; integrated circuit testing; life testing; 100 year; 150 C; CMOS process; EEPROM; Saifun NROM devices; acceleration factors; charge trapping and re-emission model; cycling level; data retention; endurance; qualification method; reliability; storage life; thermal acceleration factor; Acceleration; Charge carrier processes; Electron traps; Nonvolatile memory; Qualifications; SONOS devices; Semiconductor device manufacture; Stress; Temperature; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2003. 41st Annual. 2003 IEEE International
  • Print_ISBN
    0-7803-7649-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2003.1197799
  • Filename
    1197799
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3438593