• DocumentCode
    3438690
  • Title

    Advanced phosphorous emitters for high efficiency Si solar cells

  • Author

    Janssens, T. ; Posthuma, N.E. ; Van Kerschaver, E. ; Baert, K. ; Choulat, P. ; Everaert, J.-L. ; Goosens, J. ; Vandervorst, W. ; Poortmans, J.

  • Author_Institution
    IMECvzw, Leuven, Belgium
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Abstract
    A homogeneous emitter designed for a high efficiency Si solar cell needs to fulfill specific requirements: (1) a low surface concentration of dopants and (2) a good contact resistance. The emitter formation is studied in detail for an optimized POCl3 diffusion scheme and for plasma doping.
  • Keywords
    contact resistance; diffusion; doping profiles; elemental semiconductors; oxygen compounds; phosphorus compounds; plasma immersion ion implantation; semiconductor doping; silicon; solar cells; POCl3; Si; contact resistance; dopants; homogeneous emitter; optimized diffusion scheme; phosphorous emitters; plasma doping; plasma immersion ion implantation; solar cells; surface concentration; Contact resistance; Current density; Dielectric substrates; Doping; Glass; Ovens; Passivation; Photovoltaic cells; Plasma immersion ion implantation; Surface resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
  • Conference_Location
    Philadelphia, PA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-2949-3
  • Electronic_ISBN
    0160-8371
  • Type

    conf

  • DOI
    10.1109/PVSC.2009.5411147
  • Filename
    5411147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3438690