DocumentCode
3439065
Title
Experiment and numerical simulation of total dose effects in the substrate PNP transistors
Author
Ting Zhang ; Yuan Liu ; Yun-fei En ; Yu-Juan He ; Jian-Bo Liu ; Jin-Li Cheng ; Bin Li
Author_Institution
Sch. of Electr. & Inf. Eng., South China Univ. of Technol., Guangzhou, China
fYear
2013
fDate
15-18 July 2013
Firstpage
1030
Lastpage
1032
Abstract
This paper investigates the total dose effects of substrate PNP transistors through experiments. By considering of oxide trapped positive charges and interface traps, the radiation induced excess base current in the irradiated SPNP is simulated. The simulation results showed similar trends with the experimental results, thus the mechanisms of total dose effects in the SPNP transistors are verified.
Keywords
radiation effects; transistors; interface traps; oxide trapped positive charges; radiation induced excess base current; substrate PNP transistors; total dose effects; Degradation; Electron traps; Junctions; Radiation effects; Radiative recombination; Transistors; SPNP transistor; interface trap; numerical simulation; oxide charge; total dose;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE), 2013 International Conference on
Conference_Location
Chengdu
Print_ISBN
978-1-4799-1014-4
Type
conf
DOI
10.1109/QR2MSE.2013.6625741
Filename
6625741
Link To Document