Effect of Sn Dopant on the Properties of ZnO Nanorod Arrays

Author

Lupan, O. ; Chow, L. ; Ursaki, V. ; Monaico, E. ; Tiginyanu, I. ; Shishiyanu, S. ; Shishiyanu, T. ; Park, S. ; Schulte, A.

Author_Institution

Dept. of Microelectron. & Semicond. Devices, Moldova Tech. Univ., Chisinau

Volume

2

fYear

2007

fDate

Oct. 15 2007-Sept. 17 2007

Firstpage

349

Lastpage

352

Abstract

Sn-doped ZnO nanorod arrays were synthesized by a novel method combining the aqueous solution process with post-growth rapid photothermal processing (RPP). The post-growth RPP of Sn-doped ZnO nanostrnctures at 700 degC in vacuum was found to result in a drastic decrease of the near-bandgap photoluminescence intensity. A comparison of the impact of RPP in Sn and AI doped samples is performed and the reasons of near-bandgap photoluminescence intensity decrease in Sn-doped samples are discussed.

Keywords

II-VI semiconductors; crystal growth from solution; doping profiles; nanostructured materials; photoluminescence; photothermal effects; semiconductor growth; spectral line intensity; tin; wide band gap semiconductors; zinc compounds; ZnO:Sn; aqueous solution process; dopant effect; hydrothermal growth; nanorod arrays; nanostructured materials; near-bandgap photoluminescence intensity; post-growth rapid photothermal processing; temperature 700 C; Chemicals; Nanostructures; Optical sensors; Photoluminescence; Physics; Rapid thermal processing; Semiconductor materials; Substrates; Tin; Zinc oxide; RPP; Sn-doped ZnO nanorod arrays; photoluminescence;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2007. CAS 2007. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-0847-4

Type

conf

DOI

10.1109/SMICND.2007.4519732

Filename

4519732