DocumentCode
3439424
Title
The hydride stretching modes of hydrogenated vacancies in amorphous and nanocrystalline silicon: A helpful tool for material characterization
Author
Smets, A.H.M. ; Matsui, T. ; Kondo, M. ; van de Sanden, M.C.M.
Author_Institution
Dept. of Appl. Phys., Eindhoven Univ. of Technol., Eindhoven, Netherlands
fYear
2009
fDate
7-12 June 2009
Abstract
A model is proposed to assign the hydrogen complexes in amorphous and nano/microcrystalline silicon to the hydride stretching modes in infrared spectra. We demonstrate that this analysis approach is a helpful tool to characterize the material properties of amorphous and microcrystalline silicon.
Keywords
amorphous semiconductors; crystal microstructure; elemental semiconductors; hydrogen; hydrogenation; infrared spectra; nanostructured materials; silicon; vacancies (crystal); Si:H; amorphous silicon; hydride stretching modes; hydrogen complexes; hydrogenated vacancies; infrared spectra; microcrystalline silicon; nanocrystalline silicon; Amorphous materials; Conductive films; Conductivity; Electrodes; Epitaxial growth; Glass; Molecular beam epitaxial growth; Silicon; Substrates; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE
Conference_Location
Philadelphia, PA
ISSN
0160-8371
Print_ISBN
978-1-4244-2949-3
Electronic_ISBN
0160-8371
Type
conf
DOI
10.1109/PVSC.2009.5411182
Filename
5411182
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