Modeling of reverse subthreshold currents in the A-Si:H TFTs

Author

Yuan Liu ; Yun-fei En ; Yu-Juan He ; Qian Shi

Author_Institution

Sci. & Technol. on Reliability Phys. & Applic. of Electron. Component Lab., China Electron. Produce Reliability & Environ. Testing Res. Inst., Guangzhou, China

fYear

2013

fDate

15-18 July 2013

Firstpage

1110

Lastpage

1112

Abstract

This paper proposed a physical model for reverse subthreshold currents in the amorphous silicon thin film transistors. Firstly, an approximation for the band bending in the back interface as a function of gate-source voltage is derived. By considering of deep states, a current model based on electron conduction in the back channel is then developed. Finally, the proposed model was verified using the experimental data.

Keywords

amorphous semiconductors; deep levels; electrical conductivity; elemental semiconductors; hydrogen; semiconductor device models; silicon; thin film transistors; A-Si:H TFTs; Si:H; amorphous silicon thin film transistors; back channel electron conduction; band bending; deep states; gate-source voltage; reverse subthreshold current modeling; Amorphous silicon; Integrated circuit modeling; Logic gates; Mathematical model; Physics; Subthreshold current; Thin film transistors; amorphous silicon; band bending; reverse subthreshold current; thin film transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality, Reliability, Risk, Maintenance, and Safety Engineering (QR2MSE), 2013 International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4799-1014-4

Type

conf

DOI

10.1109/QR2MSE.2013.6625760

Filename

6625760