Modified SOI-MOSFET Structure with Shallows Diffusions

An MOSFET with a piezoelectric layer instead of the gate insulator represents a sensitive device at a mechanical pressure stimulus. If the SOI structure is modified so that significant currents occur in the V_c=0 V vicinity, a higher sensitivity is ensured. In a SOI-MOSFET this aim was possible using shallow diffusions n⁺p about 40...60 nm. An analytical model of the transducer element and ATLAS simulations revealed the electrical behavior of the device. There were comparatively presented the transfer characteristics of a classical SOI-MOSFET, a pseudo-MOS transistor and a modified SOI transistor with shallows diffusions. The last one represents a trade-off solution for a pressure sensor that needs high response in the zero gate voltage vicinity.